Control of spin-orbit torques by interface engineering in topological insulator heterostructures

Abstract

(Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss.

arXiv commentThis document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nanoletters, ©American Chemical Society after peer review

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Cited by in corpus (25)

• The 2021 Quantum Materials Roadmap
• Spin-orbit torque switching of magnetic tunnel junctions for memory application
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