activity
20042022
most citedMicromagnetic understanding of current-driven domain wall motion in patterned nanowires

1.1k citations · 3.2k across the 40 of their papers we have counts for

collaborators

41 papers

cond-mat.mes-hall2022★ 1 cited

Mass and generalized Thiele equation of the magnetic skyrmion

Yoshishige Suzuki, Soma Miki, Hikaru Nomura +1

An analytical expression is obtained for the mass of an isolated magnetic skyrmion and its linearized equation of motion. The magnetic skyrmion is viewed as a topologically protect…

cond-mat.stat-mech2021★ 11 cited

Diffusion of a magnetic skyrmion in 2-dimensional space

Yoshishige Suzuki, Soma Miki, Eiiti Tamura

Two-dimensional magnetic skyrmions are particle-like magnetic domains in magnetic thin films. The kinetic property of the magnetic skyrmions at finite temperature is well described…

cond-mat.mes-hall2020★ 74 cited

Control of spin-orbit torques by interface engineering in topological insulator heterostructures

Frédéric Bonell, Minori Goto, Guillaume Sauthier +6

(BiSb)Te topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit to…

physics.app-ph2020★ 14 cited

Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

H. Koike, S. Lee, R. Ohshima +7

To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger loc…

cond-mat.mes-hall2020★ 8 cited

Manipulating 1-dimensinal skyrmion motion by external magnetic field gradient

Jaehun Cho, Eiiti Tamura, Chaozhe Liu +7

We have investigated an analytic formula of the 1-dimensional magnetic skyrmion dynamics under external magnetic field gradient. We find excellent agreement between the analytical…

physics.app-ph2019★ 9 cited

Investigation of gating effect in Si spin MOSFET

Soobeom Lee, Fabien Rortais, Ryo Ohshima +6

A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivi…