Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory

Abstract

A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 Ω, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room temperature. This is the largest spin-accumulation voltage measured in semiconductor-based LSVs. The modified spin drift-diffusion model, which successfully accounts for the spin drift effect, explains the large spin-accumulation voltage and significant bias-current-polarity dependence. The model also shows that the spin drift effect enhances the spin-dependent magnetoresistance in the electric two terminal scheme. This finding provides a useful guiding principle for spin metal-oxide semiconductor field-effect transistor (MOSFET) operations.

29 pages, 6 figures, 2 tables

References in corpus (13)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Magnetic bipolar transistor
• An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
• Impurity-assisted tunneling magnetoresistance under weak magnetic field
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Non-ohmic spin transport in n-type doped silicon
• Spin transport and spin conversion in compound semiconductor with non-negligible spin-orbit interaction
• Reverse Schottky-Asymmetry Spin Current Detectors
• Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions

Cited by in corpus (12)

• Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes
• Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves
• Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device
• Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve
• Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
• Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy
• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
• Investigation of gating effect in Si spin MOSFET
• Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
• Spincaloritronic signal generation in non-degenerate Si
• Electric Field Modulation of Spin Transport
• On the origin of the giant spin detection efficiency in tunnel barrier based electrical spin detector