Coherent spin transport through a 350-micron-thick Silicon wafer

Abstract

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500ns at 60K.

Accepted in PRL

References in corpus (11)

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Cited by in corpus (79)

• Semiconductor Spintronics
• Spin dynamics in semiconductors
• Spin Hall effect transistor
• Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
• Electrons and holes in phosphorene
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• Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device
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• Switching energy-delay of all-spin logic devices
• Silicon spin communication
• AC/DC Spin and Valley Hall Effects in Silicene and Germanene
• Analysis of phonon-induced spin relaxation processes in silicon
• Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession
• Electrical Spin Injection into Silicon using MgO Tunnel Barrier
• Spin- and valley-dependent transport through arrays of ferromagnetic silicene junctions
• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Spin-injection Hall effect in a planar photovoltaic cell
• Superconductors as ideal spin sources for spintronics
• 98% directional guiding of spin currents with 90 micrometer relaxation length in bilayer graphene using carrier drift
• An investigation of the inverted Hanle effect in highly-doped Si
• Donor-driven spin relaxation in multi-valley semiconductors
• Electric-field control of spin accumulation signals in silicon at room temperature
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Hanle effect missing in a prototypical organic spintronic device
• Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
• Vertical organic spin valves in perpendicular magnetic fields
• Spin-phonon relaxation from a universal \emph{ab initio} density-matrix approach
• Spin polarized electron transport near the Si/SiO2 interface
• Anisotropy-driven spin relaxation in germanium
• Imaging charge and spin diffusion of minority carriers in GaAs
• Field-induced negative differential spin lifetime in silicon
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
• Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
• Inelastic electron tunneling spectroscopy of local "spin accumulation" devices
• The effect of spin drift on spin accumulation voltages in highly-doped Si
• Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
• Oblique Hanle Effect in Semiconductor Spin Transport Devices
• The Larmor clock and anomalous spin dephasing in silicon
• Spin transport theory in ferromagnet/semiconductor systems with non-collinear magnetization configurations
• Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3
• Non-ohmic spin transport in n-type doped silicon
• Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer
• Strain-induced effects on the magnetic and electronic properties of epitaxial Fe${}_{1-x}$Co${}_x$Si thin films
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
• Pure spin current transport in a SiGe alloy
• Generation of n-qubit W states using Spin Torque
• Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure
• Reverse Schottky-Asymmetry Spin Current Detectors
• Electrically controllable spin filtering based on superconducting helical states
• Theory of electrical spin-detection at a ferromagnet/semiconductor interface
• Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve
• Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
• A Brief Review of Ferroelectric Control of Magnetoresistance in Organic Spin Valves
• Suppressing spin relaxation in silicon
• Spin relaxation via exchange with donor impurity-bound electrons
• Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions
• Theory of the ac spin-valve effect
• Spin-Currents and Spin-Pumping Forces for Spintronics
• Coherent spin-current oscillations in transverse magnetic fields
• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
• Kramers' revenge
• Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy
• Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
• Investigation of gating effect in Si spin MOSFET
• Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si
• Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
• Photo-induced spin and valley-dependent Seebeck effect in the low-buckled Dirac materials
• Modeling spin transport with current-sensing spin detectors
• Voltage controlled spin precession in InAs quantum wells
• Two-photon Indirect Optical Injection and Two-color Coherent Control in Bulk Silicon
• Optical orientation in bipolar spintronic devices
• Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier
• Bias dependent features in spin transport as a probe of the conduction band minima in Si
• Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
• The influence of the spin-dependent phases of tunneling electrons on the conductance of a point ferromagnet/isolator/d-wave superconductor contact
• Theory of drift-enabled control in nonlocal magnon transport
• Towards coherent spin precession in pure-spin current
• Microwave manipulation of electrically injected spin polarized electrons in silicon