Coherent spin transport through a 350-micron-thick Silicon wafer

Abstract

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500ns at 60K.

Accepted in PRL

References in corpus (6)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Experimental realization of a silicon spin field-effect transistor
• Transit-Time Spin Field-Effect-Transistor
• 35% magnetocurrent with spin transport through Si
• Spin lifetime in silicon in the presence of parasitic electronic effects

Cited by in corpus (8)

• Superconductors as ideal spin sources for spintronics
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Oblique Hanle Effect in Semiconductor Spin Transport Devices
• Non-ohmic spin transport in n-type doped silicon
• Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure
• Theory of electrical spin-detection at a ferromagnet/semiconductor interface
• Optical orientation in bipolar spintronic devices