Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices

Abstract

A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the ohmic regime, dephasing is independent of transit length, and determined primarily by voltage drop across the spin transport region. The effects of voltage and temperature predicted by the model are compared to experimental results from a 350-micron-thick silicon spin-transport device using derived mathematical expressions of spin dephasing.

References in corpus (7)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• High temperature spin dephasing in n-typed GaAs quantum wells
• Experimental realization of a silicon spin field-effect transistor
• Transit-Time Spin Field-Effect-Transistor
• Spin lifetime in silicon in the presence of parasitic electronic effects

Cited by in corpus (4)

• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Non-ohmic spin transport in n-type doped silicon
• Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure
• Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism