Spin polarized electron transport near the Si/SiO2 interface

Abstract

Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field at 60K. As electrons are attracted to the interface by an electrostatic gate, we observe shorter average spin transit times and an increase in spin coherence, despite a reduction in total spin polarization. This behavior, which is in contrast to the expected exponential depolarization seen in bulk transport devices, is explained using a transform method to recover the empirical spin transit-time distribution and a simple two-stage drift-diffusion model. We identify strong interface-induced spin depolarization (reducing the spin lifetime by over two orders of magnitude from its bulk transport value) as the consistent cause of these phenomena.

References in corpus (13)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Performance of a spin-based insulated gate field effect transistor
• Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Experimental realization of a silicon spin field-effect transistor
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Transit-Time Spin Field-Effect-Transistor
• 35% magnetocurrent with spin transport through Si
• Non-ohmic spin transport in n-type doped silicon
• Spin lifetime in silicon in the presence of parasitic electronic effects
• Spin blockade at semiconductor/ferromagnet junctions

Cited by in corpus (23)

• Spin dynamics in semiconductors
• Theory of the spin relaxation of conduction electrons in silicon
• Analysis of phonon-induced spin relaxation processes in silicon
• Spin-Orbit Symmetries of Conduction Electrons in Silicon
• Electric-field control of spin accumulation signals in silicon at room temperature
• Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
• Anisotropy-driven spin relaxation in germanium
• Inelastic electron tunneling spectroscopy of local "spin accumulation" devices
• Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
• Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
• Effect of anisotropic spin absorption on the Hanle effect in lateral spin valves
• The Larmor clock and anomalous spin dephasing in silicon
• Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer
• Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
• Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
• Graphene-based spin-pumping transistor
• Reverse Schottky-Asymmetry Spin Current Detectors
• Suppressing spin relaxation in silicon
• A Brief Review of Ferroelectric Control of Magnetoresistance in Organic Spin Valves
• Investigation of gating effect in Si spin MOSFET
• Modeling spin transport with current-sensing spin detectors
• Microwave manipulation of electrically injected spin polarized electrons in silicon