Spin blockade at semiconductor/ferromagnet junctions
arXiv:cond-mat/0701678 · doi:10.1103/PhysRevB.75.193301
Abstract
We study theoretically extraction of spin-polarized electrons at nonmagnetic semiconductor/ferromagnet junctions. The outflow of majority spin electrons from the semiconductor into the ferromagnet leaves a cloud of minority spin electrons in the semiconductor region near the junction, forming a local spin-dipole configuration at the semiconductor/ferromagnet interface. This minority spin cloud can limit the majority spin current through the junction creating a pronounced spin-blockade at a critical current. We calculate the critical spin-blockade current in both planar and cylindrical geometries and discuss possible experimental tests of our predictions.
to be published in PRB
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- Frequency doubling and memory effects in the Spin Hall Effect
- Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime
- Hall Voltage with the Spin Hall Effect
- Surface effects on ionic Coulomb blockade in nanometer-size pores
- Hybrid Spin Noise Spectroscopy and the Spin Hall Effect