Spin extraction theory and its relevance to spintronics

Abstract

Extraction of electrons from a semiconductor to a ferromagnet as well as the case of injection in the reverse direction may be formulated as a scattering theory. However, the presence of bound states at the interface arising out of doping on the semiconductor side must be taken into account in the scattering theory. Inclusion of the interface states yields an explanation of a recent result of spin imaging measurement which contradicts the current understanding of spin extraction. The importance of an extraction theory to spintronics is illustrated by an application to a spin switch.

4 two column pages, 3 figures, major revisions to improve the presentation. in addition, the new version includes an electrically controlled spin switch

References in corpus (8)

• Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Ballistic Spin Injection from Fe(001) into ZnSe and GaAs
• Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory
• Spontaneous Spin Coherence in n-GaAs Produced by Ferromagnetic Proximity Polarization
• Ferromagnetic imprinting of spin polarization in a semiconductor
• Spin-injection through an Fe/InAs Interface
• Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures

Cited by in corpus (29)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Semiconductor Spintronics
• Spin memristive systems
• Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
• Electrical spin injection and transport in Germanium
• Spin Transport and Relaxation in Graphene
• Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene
• Efficient Spin Injection into Silicon and the Role of the Schottky Barrier
• Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations
• Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device
• Experimental Demonstration of XOR Operation in Graphene Magnetologic Gates at Room Temperature
• Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves
• Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors
• Large spin accumulation voltages in epitaxial Mn5Ge3 contacts on Ge without oxide tunnel barrier
• Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
• Spin polarization control through resonant states in an Fe/GaAs Schottky barrier
• Spin transport theory in ferromagnet/semiconductor systems with non-collinear magnetization configurations
• Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
• Spin-injection spectra of CoFe/GaAs contacts: dependence on Fe concentration, interface and annealing conditions
• Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime
• Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure
• Direct observation of exchange-driven spin interactions in one-dimensional system
• Theory of electrical spin-detection at a ferromagnet/semiconductor interface
• Photon-gated spin transistor
• Spin blockade at semiconductor/ferromagnet junctions
• Non-linear spin transport in a rectifying ferromagnet/semiconductor Schottky contact
• Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection
• Ultrafast Spin Injection in Graphene via Dynamical Carrier Filtering at Transition Metal Dichalcogenide Interfaces
• Electrical expression of spin accumulation in ferromagnet/semiconductor structures