Spin extraction theory and its relevance to spintronics

Abstract

Extraction of electrons from a semiconductor to a ferromagnet as well as the case of injection in the reverse direction may be formulated as a scattering theory. However, the presence of bound states at the interface arising out of doping on the semiconductor side must be taken into account in the scattering theory. Inclusion of the interface states yields an explanation of a recent result of spin imaging measurement which contradicts the current understanding of spin extraction. The importance of an extraction theory to spintronics is illustrated by an application to a spin switch.

4 two column pages, 3 figures, major revisions to improve the presentation. in addition, the new version includes an electrically controlled spin switch

References in corpus (2)

• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory

Cited by in corpus (10)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations
• Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors
• Spin polarization control through resonant states in an Fe/GaAs Schottky barrier
• Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime
• Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure
• Theory of electrical spin-detection at a ferromagnet/semiconductor interface
• Spin blockade at semiconductor/ferromagnet junctions
• Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection
• Electrical expression of spin accumulation in ferromagnet/semiconductor structures