Experimental Demonstration of XOR Operation in Graphene Magnetologic Gates at Room Temperature

Abstract

We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single layer graphene spin channel and relies on spin injection and spin transport in the graphene. We utilize electrical bias tuning of spin injection to balance the inputs and achieve "exclusive or" (XOR) logic operation. Furthermore, simulation of the device performance shows that substantial improvement towards spintronic applications can be achieved by optimizing device parameters such as device dimensions. This advance holds promise as a basic building block for spin-based information processing.

23 pages, 4 figures

References in corpus (9)

• Spin Transfer Torques
• Graphene Spintronics
• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• Tunneling Spin Injection into Single Layer Graphene
• Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
• Spin extraction theory and its relevance to spintronics
• Spin-polarized current amplification and spin injection in magnetic bipolar transistors
• Spin transport in graphene nanostructures
• Correlating spin transport and electrode magnetization in a graphene spin valve: simultaneous magnetic microscopy and non-local measurements

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• Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
• Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
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• Probing Tunneling Spin Injection into Graphene via Bias Dependence
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• Suppressing spin relaxation in silicon
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