A two-dimensional spin field-effect transistor

Abstract

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin current for logic operations. The approach followed so far, inspired by the seminal proposal of the Datta and Das spin modulator, has relied on the spin-orbit field as a medium for electrical control of the spin state. However, the still standing challenge is to find a material whose spin-orbit-coupling (SOC) is weak enough to transport spins over long distances, while also being strong enough to allow their electrical manipulation. Here we demonstrate a radically different approach by engineering a heterostructure from atomically thin crystals, which are "glued" by weak van der Waals (vdW) forces and which combine the superior spin transport properties of graphene with the strong SOC of the semiconducting MoS${}_2$. The spin transport in the graphene channel is modulated between ON and OFF states by tuning the spin absorption into the MoS${}_2$ layer with a gate electrode. Our demonstration of a spin field-effect transistor using two-dimensional (2D) materials identifies a new route towards spin logic operations for beyond CMOS technology.

13 pages, 3 figures, supplemental material

References in corpus (9)

• Electric Field Effect in Atomically Thin Carbon Films
• Graphene Spintronics
• Spin-Orbit Proximity Effect in Graphene
• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• Tunneling Spin Injection into Single Layer Graphene
• Limits on electron quality in suspended graphene due to flexural phonons
• All-electric all-semiconductor spin field effect transistors
• 98% directional guiding of spin currents with 90 micrometer relaxation length in bilayer graphene using carrier drift
• Revisiting the measurement of the spin relaxation time in graphene-based devices

Cited by in corpus (72)

• Van der Waals heterostructures for spintronics and opto-spintronics
• Van der Waals heterostructures for high-performance device applications: challenges and opportunities
• Colloquium: Spintronics in graphene and other two-dimensional materials
• Room temperature spin Hall effect in graphene/MoS${}_2$ van der Waals heterostructures
• Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature
• Charge-to-Spin Conversion by the Rashba-Edelstein Effect in 2D van der Waals Heterostructures up to Room Temperature
• Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
• Giant Spin Lifetime Anisotropy in Graphene Induced by Proximity Effects
• Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures
• Spin transport in graphene/transition metal dichalcogenide heterostructures
• Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides
• Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures
• Induced spin-orbit coupling in twisted graphene-TMDC heterobilayers: twistronics meets spintronics
• Raman spectrum of Janus transition metal dichalcogenide monolayers WSSe and MoSSe
• Spin Hall effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures
• Large multi-directional spin-to-charge conversion in low symmetry semimetal MoTe${}_2$ at room temperature
• Spin Proximity Effects in Graphene/Topological Insulator Heterostructures
• Observation of Spin Hall Effect in Weyl Semimetal WTe2 at Room Temperature
• Optospintronics in graphene via proximity coupling
• Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
• Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature
• Graphene-WS${}_2$ heterostructures for tunable spin injection and spin transport
• Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
• Strong and Tunable Spin Lifetime Anisotropy in Dual-Gated Bilayer Graphene
• Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
• Dynamical screening in monolayer transition-metal dichalcogenides and its manifestations in the exciton spectrum
• Effect of distance on photoluminescence quenching and proximity-induced spin-orbit coupling in graphene-WSe2 heterostructures
• Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe${}_2$
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure
• Two-Dimensional Spintronic Circuit Architectures on Large Scale Graphene
• Spontaneous Anomalous Hall Effect in Two-Dimensional Altermagnets
• Spin transport in high-mobility graphene on WS${}_2$ substrate with electric-field tunable proximity spin-orbit interaction
• Strong Rashba effect in the localized impurity states of halogen-doped monolayer PtSe2
• Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device
• Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures
• Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature
• Low-symmetry topological materials for large charge-to-spin interconversion: The case of transition metal dichalcogenide monolayers
• Janus Monolayers of Magnetic Transition Metal Dichalcogenides as an All-in-One Platform for Spin-Orbit Torque
• Scale-invariant large nonlocality in polycrystalline graphene
• Van der Waals heterostructures with spin-orbit coupling
• Large spin-relaxation anisotropy in bilayer-graphene/WS${}_2$ heterostructures
• Universal transfer and stacking technique of van der Waals heterostructures for spintronics
• Proximity-Induced Spin-Orbit Coupling in Graphene-Bi${}_{1.5}$Sb${}_{0.5}$Te${}_{1.7}$Se${}_{1.3}$ Heterostructures
• Room-temperature anisotropic in-plane spin dynamics in graphene induced by PdSe${}_2$ proximity
• Independent geometrical control of spin and charge resistances in curved spintronics
• Probing Tunneling Spin Injection into Graphene via Bias Dependence
• Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries
• Robust Zeeman-type band splitting in sliding ferroelectrics
• Berry curvature in monolayer MoS${}_2$ with broken mirror symmetry
• Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length
• Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design
• Twisted bilayer graphene reveals its flat bands under spin pumping
• Rashba Effect and Raman Spectra of Tl${}_2$O/PtS${}_2$ Heterostructure
• Probing magnetism via spin dynamics in graphene/2D-ferromagnet heterostructures
• Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals
• Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers
• Resonant Tunneling Anisotropic Magnetoresistance Induced by Magnetic Proximity
• Exploring room temperature spin transport under band gap opening in bilayer graphene
• Quasiperiodic magnetic chain as a spin filter for arbitrary spin states
• Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
• Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet
• Dielectric properties of graphene on transition metal dichalcogenide substrate
• The emergence of interface states in graphene/transition metal dichalcogenides heterostructure with lateral interface
• Spin-dependent edge states in two-dimensional Dirac materials with a flat band
• Increasing the proximity induced spin-orbit coupling in bilayer graphene/WSe${}_2$ heterostructures with pressure
• Persistent spin texture preserved by local symmetry in graphene/WTe${}_2$ heterostructure
• Spin and Magnetism in 2D Materials
• Room temperature two terminal tunnel magnetoresistance in lateral graphene transistor
• Direct observation of distinct bulk and edge nonequilibrium spin accumulation in ultrathin MoTe${}_2$
• Proximity spin-orbit coupling in graphene on alloyed transition metal dichalcogenides
• Gate tunable spin-charge interconversion in a graphene/ReS${}_2$ heterostructure up to room temperature