Increasing the proximity induced spin-orbit coupling in bilayer graphene/WSe heterostructures with pressure
arXiv:2409.20062 · doi:10.1103/PhysRevB.111.205415
Abstract
Combining graphene with transition metal dichalcogenides (TMDs) leads to enhanced spin-orbit coupling (SOC) in the graphene. The induced SOC has a large effect on the low-energy part of the band structure leading to or stabilizing novel phases such as topological phases or superconductivity. Here, the pressure dependence of the SOC strength is investigated in bilayer graphene/WSe heterostructures. We performed magnetoconductance studies, such as weak localization, quantum Hall, and Shubnikov-de Haas oscillation measurements to extract the different SOC terms which determine the low-energy band structure of BLG. We find the proximity-induced SOC strengths increased by more than 50\% as a result of applying 2\,GPa hydrostatic pressure. Our studies highlight the opportunity to increase the SOC coupling strength with pressure, which can be important for correlated phases or spin qubits in BLG/WSe heterostructures.
References in corpus (54)
- Graphene Spintronics
- The electronic properties of bilayer graphene
- Spin-Orbit Proximity Effect in Graphene
- Strong interface-induced spin-orbit coupling in graphene on WS2
- Graphene on transition-metal dichalcogenides: a platform for proximity spin-orbit physics and optospintronics
- Superconductivity without insulating states in twisted bilayer graphene stabilized by monolayer WSe
- Dynamic band structure tuning of graphene moiré superlattices with pressure
- Trivial and inverted Dirac bands, and emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides
- Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
- Room temperature spin Hall effect in graphene/MoS van der Waals heterostructures
- Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature
- Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
- Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene
- Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures
- A two-dimensional spin field-effect transistor
- Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures
- Accurate tight-binding and continuum models for the bands of bilayer graphene
- Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS
- Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
- Proximity effects in bilayer graphene on monolayer WSe: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
- Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures
- Spin-orbit driven ferromagnetism at half moiré filling in magic-angle twisted bilayer graphene
- Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures
- Twist-angle dependence of the proximity spin-orbit coupling in graphene on transition-metal dichalcogenides
- Induced spin-orbit coupling in twisted graphene-TMDC heterobilayers: twistronics meets spintronics
- Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS
- Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
- Direct measurement of discrete valley and orbital quantum numbers in a multicomponent quantum Hall system
- Coupled quantum dots in bilayer graphene
- Magnetotransport in heterostructures of transition metal dichalcogenides and graphene
- Gate-defined electron-hole double dots in bilayer graphene
- Quantum Hall Effect Measurement of Spin-Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures
- Graphene-WS heterostructures for tunable spin injection and spin transport
- Long-lived valley states in bilayer graphene quantum dots
- Single-electron double quantum dots in bilayer graphene
- On-Demand Spin-Orbit Interaction from Which-Layer Tunability in Bilayer Graphene
- Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe
- Spin relaxation in a single-electron graphene quantum dot
- Single-shot readout in graphene quantum dots
- Determining spin-orbit coupling in graphene by quasiparticle interference imaging
- Spin transport in high-mobility graphene on WS substrate with electric-field tunable proximity spin-orbit interaction
- Twist-angle tunable spin texture in WSe/graphene van der Waals heterostructures
- Tailoring the band structure of twisted double bilayer graphene with pressure
- Counterintuitive gate dependence of weak antilocalization in bilayer graphene/WSe heterostructures
- Ballistic transport spectroscopy of spin-orbit-coupled bands in monolayer graphene on WSe
- Bilayer graphene encapsulated within monolayers of WS or CrGeTe: Tunable proximity spin-orbit or exchange coupling
- Transport measurements on van der Waals heterostructures under pressure
- Experimental observation of spin-split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
- Topological phases and twisting of graphene on a dichalcogenide monolayer
- Spin-Valley Protected Kramers Pair in Bilayer Graphene
- Spin-orbit coupling-enhanced valley ordering of malleable bands in twisted bilayer graphene on WSe2
- Topological flat bands, valley polarization, and interband superconductivity in magic-angle twisted bilayer graphene with proximitized spin-orbit couplings
- Tunable Quantum Hall Edge Conduction in Bilayer Graphene through Spin-Orbit Interaction
- Stabilizing the inverted phase of a WSe/BLG/WSe heterostructure via hydrostatic pressure