Graphene-WS${}_2$ heterostructures for tunable spin injection and spin transport

Abstract

We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS${}_2$) layer, along with a modified spin relaxation time (τs) in graphene in the WS${}_2$ environment, via spin-valve and Hanle spin-precession measurements, respectively. First, during the spin-injection into graphene through a WS${}_2$-graphene interface, we can tune the interface resistance at different current bias and modify the spin injection efficiency, in a correlation with the conductivity-mismatch theory. Temperature assisted tunneling is identified as a dominant mechanism for the charge transport across the interface. Second, we measure the spin transport in graphene, underneath the WS${}_2$ crystal and observe a significant reduction in the τs down to 17 ps in graphene in the WS${}_2$ covered region, compared to that in its pristine state. The reduced τs indicates the WS${}_2$-proximity induced additional dephasing of the spins in graphene.

arXiv comment7 Pages, 6 figures

References in corpus (24)

• Electronic spin transport and spin precession in single graphene layers at room temperature
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Valley Dependent Optoelectronics from Inversion Symmetry Breaking
• Spin-Orbit Proximity Effect in Graphene
• Strong interface-induced spin-orbit coupling in graphene on WS2
• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Strong interfacial exchange field in the graphene/EuS heterostructure
• Trivial and inverted Dirac bands, and emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides
• Spin-Orbit-Mediated Spin Relaxation in Graphene
• Electron spin relaxation in graphene: the role of the substrate
• Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride
• A two-dimensional spin field-effect transistor
• Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
• Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS${}_2$
• Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2
• Spin-valley locking in the normal state of a transition-metal dichalocogenide superconductor
• Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
• 24 \textmu m length spin relaxation length in boron nitride encapsulated bilayer graphene
• Contact induced spin relaxation in Hanle spin precession measurements
• Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS${}_2$ Heterostructures
• Spin transport in fully hexagonal boron nitride encapsulated graphene
• Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
• Electrical spin injection into graphene from a topological insulator in a van der Waals heterostructure
• Effect of ferromagnetic exchange field on band-gap and spin-polarization of graphene on a TMD substrate

Cited by in corpus (21)

• Room temperature spin Hall effect in graphene/MoS${}_2$ van der Waals heterostructures
• Giant Spin Lifetime Anisotropy in Graphene Induced by Proximity Effects
• Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures
• Spin transport in graphene/transition metal dichalcogenide heterostructures
• Proximity effects in bilayer graphene on monolayer WSe${}_2$: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
• Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling
• Twist-angle dependent proximity induced spin-orbit coupling in graphene/transition-metal dichalcogenide heterostructures
• Protected pseudohelical edge states in proximity graphene ribbons and flakes
• Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
• Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides
• Spin transport in high-mobility graphene on WS${}_2$ substrate with electric-field tunable proximity spin-orbit interaction
• Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe${}_2$ Tunnel Field-Effect Transistors
• Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr${}_2$Ge${}_2$Te${}_6$
• Antiferromagnetic spin valve from heterostructure of two-dimensional hexagonal crystals
• Large spin-relaxation anisotropy in bilayer-graphene/WS${}_2$ heterostructures
• Wideband and on-chip excitation for dynamical spin injection into graphene
• Two-Dimensional Higher-Order Topological Metals
• Valley-controlled transport in graphene/ WSe${}_2$ heterostructures under an off-resonant polarized light
• Dirac-Rashba fermions and quantum valley Hall insulators in graphene-based 2D heterostructures
• Ultrafast Spin Injection in Graphene via Dynamical Carrier Filtering at Transition Metal Dichalcogenide Interfaces
• Increasing the proximity induced spin-orbit coupling in bilayer graphene/WSe${}_2$ heterostructures with pressure