47 citations · 85 across the 4 of their papers we have counts for
5 papers
A two-channel model for Spin-relaxation noise
Siddhartha Omar, Bart J. van Wees, Ivan J. Vera-Marun
We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculat…
Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
Mallikarjuna Gurram, Siddhartha Omar, Simon Zihlmann +5
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron ni…
Spin transport in high-mobility graphene on WS substrate with electric-field tunable proximity spin-orbit interaction
Siddhartha Omar, Bart J. van Wees
Graphene supported on a transition metal dichalcogenide substrate offers a novel platform to study the spin transport in graphene in presence of a substrate induced spin-orbit coup…
Spin relaxation 1/f noise in graphene
S. Omar, M. H. D. Guimarães, A. Kaverzin +2
We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge p…
Spin transport in fully hexagonal boron nitride encapsulated graphene
M. Gurram, S. Omar, S. Zihlmann +3
We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crysta…