activity
20152020
most citedBias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures

130 citations · 452 across the 11 of their papers we have counts for

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Showing 2017Show all

6 papers · 1 filter

cond-mat.mes-hall2017★ 74 cited

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

Mallikarjuna Gurram, Siddhartha Omar, Bart J. van Wees

The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexa…

cond-mat.mes-hall2017★ 2 cited

A two-channel model for Spin-relaxation noise

Siddhartha Omar, Bart J. van Wees, Ivan J. Vera-Marun

We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculat…

cond-mat.mes-hall2017★ 29 cited

Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

Mallikarjuna Gurram, Siddhartha Omar, Simon Zihlmann +5

We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron ni…

cond-mat.mes-hall2017★ 47 cited

Spin transport in high-mobility graphene on WS substrate with electric-field tunable proximity spin-orbit interaction

Siddhartha Omar, Bart J. van Wees

Graphene supported on a transition metal dichalcogenide substrate offers a novel platform to study the spin transport in graphene in presence of a substrate induced spin-orbit coup…

cond-mat.mes-hall2017★ 130 cited

Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures

Mallikarjuna Gurram, Siddhartha Omar, Bart J. van Wees

We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals (vdW) heterostructure, at room temperature. A top-layer of bilayer-hBN is used as a tunnel barr…

cond-mat.mes-hall2017★ 7 cited

Spin relaxation 1/f noise in graphene

S. Omar, M. H. D. Guimarães, A. Kaverzin +2

We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge p…