Spin relaxation 1/f noise in graphene

Abstract

We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to the measured spin-dependent noise: contact polarization noise from the ferromagnetic electrodes, which can be filtered out using the cross-correlation method, and the noise originated from the spin relaxation processes. The noise magnitude for spin and charge transport differs by three orders of magnitude, implying different scattering mechanisms for the 1/f fluctuations in the charge and spin transport processes. A modulation of the spin-dependent noise magnitude by changing the spin relaxation length and time indicates that the spin-flip processes dominate the spin-dependent noise.

arXiv comment10 pages, 11 figures

References in corpus (19)

• Electronic spin transport and spin precession in single graphene layers at room temperature
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Spin-Orbit-Mediated Spin Relaxation in Graphene
• Electron spin relaxation in graphene: the role of the substrate
• Linear scaling between momentum and spin scattering in graphene
• Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride
• Spin relaxation mechanism in graphene: resonant scattering by magnetic impurities
• Quantum suppression of shot noise in atom-size metallic contacts
• Direct Probing of 1/f Noise Origin with Graphene Multilayers: Surface vs. Volume
• 24 \textmu m length spin relaxation length in boron nitride encapsulated bilayer graphene
• Contact induced spin relaxation in Hanle spin precession measurements
• Defect-mediated spin relaxation and dephasing in graphene
• Spin Transport in Hydrogenated Graphene
• Impurities as a source of flicker noise in graphene
• Spin dephasing and pumping in graphene due to random spin-orbit interaction
• Shot Noise Induced by Nonequilibrium Spin Accumulation
• Spin transport in graphene nanostructures
• Spin Relaxation in Graphene with self-assembled Cobalt Porphyrin Molecules

Cited by in corpus (6)

• Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
• Resonant scattering due to adatoms in graphene: top, bridge, and hollow position
• Microscopic linear response theory of spin relaxation and relativistic transport phenomena in graphene
• Collective $1/f$ fluctuation by pseudo-Casimir-invariants
• Nonlinear analog spintronics with van der Waals heterostructures
• A two-channel model for Spin-relaxation noise