Electron spin relaxation in graphene: the role of the substrate

Abstract

Theory of the electron spin relaxation in graphene on the SiO${}_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which leads to spin relaxation by the D'yakonov-Perel' mechanism. Analytical estimates and Monte Carlo simulations show that the corresponding spin relaxation times are between micro- to milliseconds, being only weakly temperature dependent. It is also argued that the presence of adatoms on graphene can lead to spin lifetimes shorter than nanoseconds.

5 pages, 4 figures

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• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
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• Anisotropic spin relaxation in graphene
• Electronic spin drift in graphene field effect transistors
• Electrostatic interactions between graphene layers and their environment
• Transport in suspended graphene
• Models of electron transport in single layer graphene
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• Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride
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• Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene
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• Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
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• Graphene p-n junctions with nonuniform Rashba spin-orbit coupling
• Nonlocal spin transport in single walled carbon nanotube networks
• Intrinsic and substrate induced spin-orbit interaction in chirally stacked trilayer graphene
• Testing the Elliott-Yafet spin-relaxation mechanism in KC8; a model system of biased graphene
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• Microscopic linear response theory of spin relaxation and relativistic transport phenomena in graphene
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