Spin Relaxation in Single Layer Graphene with Tunable Mobility
arXiv:1206.6941 · doi:10.1021/nl301567n
Abstract
Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured via Hanle effects are much shorter than expected theoretically. Thus, the origin of spin relaxation in SLG is a major issue for graphene spintronics. Despite extensive theoretical and experimental work addressing this question, there is still little clarity on the microscopic origin of spin relaxation. By using organic ligand-bound nanoparticles as charge reservoirs to tune mobility between 2700 and 12000 cm2/Vs, we successfully isolate the effect of charged impurity scattering on spin relaxation in SLG. Our results demonstrate that while charged impurities can greatly affect mobility, the spin lifetimes are not affected by charged impurity scattering.
13 pages, 5 figures
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- Graphene Spintronics
- Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
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- Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals
- Rashba Spin Orbit Interaction and Birefringent Electron Optics in Graphene
- Effect of contacts on spin lifetime measurements in graphene
- Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
- Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC
- Effect of in-situ deposition of Mg adatoms on spin relaxation in graphene
- Dry-transferred CVD graphene for inverted spin valve devices
- Spin dependent quantum interference in non-local graphene spin valves
- Scattering from spin-polarized charged impurities in graphene