Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

Abstract

We present results of non-local and three terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees Celsius for 15 minutes in vacuum. The values of spin relaxation length L_s and spin relaxation time tau_s obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant D_s and charge diffusion constant D_c can be resolved by investigating the temperature dependence of the g-factor, which is consistent with a model for paramagnetic magnetic moments.

arXiv commentrevised version, incl Supplemental Material, published in Phys Rev B

References in corpus (21)

• The electronic properties of graphene
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Electronic spin transport and spin precession in single graphene layers at room temperature
• Magnetism in Graphene Induced by Single-Atom Defects
• Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
• Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
• Tunneling Spin Injection into Single Layer Graphene
• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• Highly efficient spin transport in epitaxial graphene on SiC
• Spin Relaxation in Single Layer and Bilayer Graphene
• Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
• Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature
• The quasi-free-standing nature of graphene on H-saturated SiC(0001)
• Electronic spin transport in graphene field effect transistors
• Spin transport in high quality suspended graphene devices
• Terahertz radiation driven chiral edge currents in graphene
• Electrical spin injection and detection in lateral all-semiconductor devices
• Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
• Localized states influence spin transport in epitaxial graphene
• Spin Relaxation in Single Layer Graphene with Tunable Mobility
• The effect of spin drift on spin accumulation voltages in highly-doped Si

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• Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
• Spin Transport and Precession in Graphene measured by Nonlocal and Three-Terminal Methods
• Resonant scattering due to adatoms in graphene: top, bridge, and hollow position
• Resonant scattering by magnetic impurities as a model for spin relaxation in bilayer graphene
• Absence of hyperfine effects in ${}^{13}$C-graphene spin valve devices
• Integrating MBE materials with graphene to induce novel spin-based phenomena
• Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
• Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions
• Spin Relaxation in Graphene with self-assembled Cobalt Porphyrin Molecules
• Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al${}_2$O${}_3$ spin injection and detection barriers
• Observation of anomalous Hanle spin precession lineshapes resulting from interaction with localized states