Large-scale BN tunnel barriers for graphene spintronics

Abstract

We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of 260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.

arXiv comment13 pages, 3 figures

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• Electrically tunable exchange splitting in bilayer graphene on monolayer Cr${}_2$X${}_2$Te${}_6$ with X=Ge, Si, and Sn
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• Spin transport in fully hexagonal boron nitride encapsulated graphene
• Two-dimensional flexible high diffusive spin circuits
• Giant proximity exchange and valley splitting in transition metal dichalcogenide/$h\mathrm{BN}$/(Co, Ni) heterostructures
• Gate-controlled supercurrent in epitaxial Al/InAs nanowires
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• Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
• Role of hexagonal boron nitride in protecting ferromagnetic nanostructures from oxidation
• Wideband and on-chip excitation for dynamical spin injection into graphene
• Spin Relaxation at Graphene Nanoribbons in the presence of Substrate Surface Roughness
• Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al${}_2$O${}_3$ spin injection and detection barriers
• Bias dependent spin injection into graphene on YIG through bilayer hBN tunnel barriers