Large-scale BN tunnel barriers for graphene spintronics

Abstract

We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of 260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.

13 pages, 3 figures

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Cited by in corpus (5)

• Ultrasensitive Field-Effect Biosensors Enabled by the Unique Electronic Properties of Graphene
• Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
• Giant proximity exchange and valley splitting in transition metal dichalcogenide/$h\mathrm{BN}$/(Co, Ni) heterostructures
• Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
• Spin Relaxation at Graphene Nanoribbons in the presence of Substrate Surface Roughness