Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
arXiv:1608.08688 · doi:10.1063/1.4962635
Abstract
We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature spin lifetimes in excess of a nanosecond, which provides experimental confirmation that h-BN is indeed a good barrier material for spin injection into graphene. By carrying out measurements with different thicknesses of h-BN, we show that few layer h-BN is a better choice than monolayer for achieving high non-local spin signals and longer spin relaxation times in graphene.
arXiv comment22 pages, 4 figures and supplementary material, [accepted for publication in Applied Physics Letters]
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- Colloquium: Spintronics in graphene and other two-dimensional materials
- Spin transport in graphene/transition metal dichalcogenide heterostructures
- Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures
- Induced spin-orbit coupling in twisted graphene-TMDC heterobilayers: twistronics meets spintronics
- Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
- Strong modulation of spin currents in bilayer graphene by static and fluctuating proximity exchange fields
- Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
- Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
- Heterostructures of graphene and hBN: electronic, spin-orbit, and spin relaxation properties from first principles
- Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
- Two-dimensional flexible high diffusive spin circuits
- Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties
- Measuring anisotropic spin relaxation in graphene
- Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
- Twist-angle dependent proximity induced spin-orbit coupling in graphene/topological insulator heterostructures
- Tuneable spin injection in high-quality graphene with one-dimensional contacts
- Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance
- Probing Tunneling Spin Injection into Graphene via Bias Dependence
- Efficient spin injection into graphene through trilayer hBN tunnel barriers
- Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length
- Wideband and on-chip excitation for dynamical spin injection into graphene
- Giant asymmetric proximity-induced spin-orbit coupling in twisted graphene/SnTe heterostructure
- Stabilizing the inverted phase of a WSe/BLG/WSe heterostructure via hydrostatic pressure
- Simulations on the influence of spatially-varying spin transport parameters on the measured spin lifetime in graphene non-local spin valves
- Tunneling Spectroscopy of Two-Dimensional Materials Based on Via Contacts
- Polarization amplification by spin-doping in nanomagnetic/graphene hybrid systems
- Ferroelectric switching control of spin current in graphene proximitized by InSe