Two-dimensional flexible high diffusive spin circuits
arXiv:1807.11460 · doi:10.1021/acs.nanolett.8b03520
Abstract
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an exceptionally resilient material for flexible electronics. However, these extraordinary traits have never been combined to create flexible graphene spin circuits. Realizing such circuits could lead to bendable strain-based spin sensors, a unique platform to explore pure spin current based operations and low power flexible nanoelectronics. Here, we demonstrate graphene spin circuits on flexible substrates for the first time. These circuits, realized using chemical vapour deposited (CVD) graphene, exhibit large spin diffusion coefficients ~0.19-0.24 m2s-1 at room temperature. Compared to conventional devices of graphene on Si/SiO2 substrates, such values are 10-20 times larger and result in a maximum spin diffusion length ~10 um in graphene achieved on such industry standard substrates, showing one order enhanced room temperature non-local spin signals. These devices exhibit state of the art spin diffusion, arising out of a distinct substrate topography that facilitates efficient spin transport, leading to a scalable, high-performance platform towards flexible 2D spintronics. Our innovation unlocks a new domain for the exploration of strain-dependent spin phenomena and paves the way for flexible graphene spin memory-logic units and surface mountable sensors.
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