Printed Graphene Circuits

Abstract

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have low contact resistance. The results show that the transfer printing method is capable of high-quality transfer of graphene materials from silicon dioxide substrates, and the method thus will have wide applications in manipulating and delivering graphene materials to desired substrate and device geometries. Since the method is purely additive, it exposes graphene (or other functional materials) to no chemical preparation or lithographic steps, providing greater experimental control over device environment for reproducibility and for studies of fundamental transport mechanisms. Finally, the transport properties of the graphene devices on the PET substrate demonstrate the non-universality of minimum conductivity and the incompleteness of the current transport theory.

10 pages, 3 figures

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Cited by in corpus (15)

• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Production, properties and potential of graphene
• Charged Impurity Scattering in Graphene
• Wafer-scale synthesis and transfer of graphene films
• Charge Transport and Inhomogeneity near the Charge Neutrality Point in Graphene
• Effects of Mismatch Strain and Substrate Surface Corrugation on Morphology of Supported Monolayer Graphene
• Diffusive Charge Transport in Graphene on SiO2
• Substrate-regulated morphology of graphene
• Scattering mechanisms and Boltzmann transport in graphene
• Snap-through instability of graphene on substrates
• Two-dimensional flexible high diffusive spin circuits
• RKKY Interactions in Graphene: Dependence on Disorder and Gate Voltage
• Model for the magnetoresistance and Hall coefficient of inhomogeneous graphene
• Graphene morphology regulated by nanowires patterned in parallel on a substrate surface
• On the Wiedemann-Franz law violation in Graphene and quark-gluon plasma systems