Scattering mechanisms and Boltzmann transport in graphene
arXiv:0708.0404 · doi:10.1016/j.physe.2007.09.064
Abstract
Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as well as analytical expressions for the dependence of conductivity on the dielectric constant of the substrate. We further examine the effect of ripples on the transport using a surface roughness model developed for semiconductor heterostructures. We find that close to the Dirac point, σ\sim n^β, where β=1,0,-2 for Coulomb, short-range and surface roughness respectively; implying that Coulomb scattering dominates over both short-range and surface roughness scattering at low density.
To be published in Physica E as EP2DS-17 conference proceedings
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Cited by in corpus (8)
- Charged Impurity Scattering in Graphene
- Colloquium: The transport properties of graphene: An introduction
- Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
- Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
- Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
- Boltzmann transport and residual conductivity in bilayer graphene
- Diffusive Charge Transport in Graphene on SiO2
- Ground-state properties of gapped graphene using the random phase approximation