Scattering mechanisms and Boltzmann transport in graphene
arXiv:0708.0404 · doi:10.1016/j.physe.2007.09.064
Abstract
Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as well as analytical expressions for the dependence of conductivity on the dielectric constant of the substrate. We further examine the effect of ripples on the transport using a surface roughness model developed for semiconductor heterostructures. We find that close to the Dirac point, σ\sim n^β, where β=1,0,-2 for Coulomb, short-range and surface roughness respectively; implying that Coulomb scattering dominates over both short-range and surface roughness scattering at low density.
To be published in Physica E as EP2DS-17 conference proceedings
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