Ground-state properties of gapped graphene using the random phase approximation

Abstract

We study the effect of band gap on the ground-state properties of Dirac electrons in a doped graphene within the random phase approximation at zero temperature. Band gap dependence of the exchange, correlation and ground-state energies and the compressibility are calculated. We additionally show that the conductance in the gapped graphene is smaller than gapless one. We also calculate the band gap dependence of charge compressibility and it decreases with increasing the band gap values.

11 pages, Final version. To appear in Phys. Rev. B

References in corpus (41)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Two Dimensional Atomic Crystals
• Quantum Spin Hall Effect in Graphene
• Ultrahigh electron mobility in suspended graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Half-Metallic Graphene Nanoribbons
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Suspended Graphene: a bridge to the Dirac point
• Substrate-induced band gap opening in epitaxial graphene
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Dielectric function, screening, and plasmons in 2D graphene
• Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
• Substrate-induced bandgap in graphene on hexagonal boron nitride
• Carrier transport in 2D graphene layers
• A self-consistent theory for graphene transport
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Dynamical polarization of graphene at finite doping
• Spin-orbit gap of graphene: First-principles calculations
• Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
• Non-Fermi liquid behaviour of electrons in the half-filled honeycomb lattice (A renormalization group approach)
• Electron fractionalization in two-dimensional graphenelike structures
• Epitaxial graphene transistors on SiC substrates
• Electric Field Modulation of Galvanomagnetic Properties of Mesoscopic Graphite
• AC conductivity of graphene: from tight-binding model to 2+1-dimensional quantum electrodynamics
• Spin Hall Insulator
• Visibility of graphene flakes on a dielectric substrate
• Elastic scattering theory and transport in graphene
• Quantum critical scaling in graphene
• Coulomb Interactions and Ferromagnetism in Pure and Doped Graphene
• Chirality and Correlations in Graphene
• Numbers of donors and acceptors from transport measurements in graphene
• Inducing energy gaps in graphene monolayer and bilayer
• Coulomb screening and collective excitations in a graphene bilayer
• Density dependent exchange contribution to $\partial \mu /\partial n$ in extrinsic graphene
• Intrinsic Gap of the nu=5/2 Fractional Quantum Hall State
• Scattering mechanisms and Boltzmann transport in graphene
• Polarization Charge Distribution in Gapped Graphene
• Effect of disorder on the ground-state properties of graphene
• Vibration-induced Kondo tunneling through metal-organic complexes with even electron occupation number

Cited by in corpus (26)

• Properties of Graphene: A Theoretical Perspective
• Plasmonics in Dirac systems: from graphene to topological insulators
• Formation of atomic nanoclusters on graphene sheets
• Many-body effects in van der Waals-Casimir interaction between graphene layers
• Robust zero-averaged wave-number gap inside gapped graphene superlattices
• Dynamical polarization of monolayer graphene in a magnetic field
• Dynamical screening in bilayer graphene
• Coulomb screening and collective excitations in biased bilayer graphene
• Dynamical polarizability, screening, and plasmons in one, two, and three dimensional massive Dirac systems
• Conductivity of graphene in the framework of Dirac model: Interplay between nonzero mass gap and chemical potential
• The effect of sublattice symmetry breaking on the electronic properties of a doped graphene
• Electronic ground state properties of strained graphene
• Finite temperature dynamical polarization and plasmons in gapped graphene
• Temperature dependent screened electronic transport in gapped graphene
• Polarization operator in the 2+1 dimensional quantum electrodynamics with a nonzero fermion density in a constant uniform magnetic field
• Effect of a gap opening on the conductance of graphene superlattices
• Relaxation times and charge conductivity of silicene
• Quantum capacitance of double-layer graphene
• Effect of Holstein phonons on the optical conductivity of gapped graphene
• Trapping photon-dressed Dirac electrons in a quantum dot studied by coherent two dimensional photon echo spectroscopy
• Coulomb Screening of 2D Massive Dirac Fermions
• Temperature dependence of the paramagnetic spin susceptibility of doped graphene
• Collective excitations and the nature of Mott transition in undoped gapped graphene
• Plasmon modes in double-layer biased bilayer graphene
• Influence of Dynamical Floquet Spectrum on the Plasmon Excitations and Exchange Energy of tilted monolayer 1T${}^{\prime }$MoS${}_2$
• Temperature Dependence of the Response Functions of Graphene: Impact on Casimir and Casimi-Polder Forces in and out of Thermal Equilibrium