Epitaxial graphene transistors on SiC substrates

Abstract

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silicon-based electronics. This enthusiasm was spurred by high carbon nanotube carrier mobilities. However, nanotube production, placement, and control are all serious issues. Graphene, a thin sheet of graphitic carbon, can overcome some of these problems and therefore is a promising new electronic material. Although graphene devices have been built before, in this work we provide the first demonstration and systematic evaluation of arrays of a large number of transistors entirely produced using standard microelectronics methods. Graphene devices presented feature high-k dielectric, mobilities up to 5000 cm2/Vs and, Ion/Ioff ratios of up to 7, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micron-scale devices have negligible band gaps and therefore large leakage currents.

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Substrate-induced band gap opening in epitaxial graphene
• Epitaxial graphene

Cited by in corpus (6)

• Atomic Hole Doping of Graphene
• Non-volatile switching in graphene field effect devices
• Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances
• The interface structure of epitaxial graphene grown on 4H-SiC(0001)
• Ground-state properties of gapped graphene using the random phase approximation
• Early stage formation of graphene on the C-face of 6H-SiC