Highly-ordered graphene for two dimensional electronics

Abstract

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.

Submitted to Appl. Phys. Lett

References in corpus (2)

• Electric Field Effect in Atomically Thin Carbon Films
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics

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• Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
• Reduction of Fermi velocity in folded graphene observed by resonance Raman spectroscopy
• Few layers graphene on 6H-SiC(000-1): an STM study
• The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
• Morphology of graphene thin film growth on SiC(0001)
• Half Metallicity in Hybrid BCN Nanoribbons
• The interface structure of epitaxial graphene grown on 4H-SiC(0001)
• Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
• Tuning impurity states in bilayer graphene
• Effect of Coulomb scattering on graphene conductivity
• Evolution in Surface Morphology of Epitaxial Graphene Layers on SiC Induced by Controlled Structural Strain
• Raman spectroscopy and imaging of graphene