Straining Graphene by Chemical Vapour Deposition Growth on Copper
arXiv:1101.1884 · doi:10.1103/PhysRevB.84.205407
Abstract
Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible to tune the uniform strain of graphene simply by changing the chemical vapor deposition growth temperature of graphene on copper. Due to the cooling of the graphene on copper system, we can induce a uniform compressive strain on graphene. The strain is analyzed by Raman spectroscopy, where a shift in the 2D peak is observed and compared to our ab initio calculations of the graphene on copper system as a function of strain.
5 pages, 5 figures
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