Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering

Abstract

The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contrast, graphene grown on polycrystalline Ni films is shown to be unpinned, i.e., to behave elastically as freestanding, despite the relatively strong interaction with the metal substrate. Moreover, it is shown that the transfer of exfoliated graphene layers onto a supporting substrate can result in pinned or unpinned layers, depending on the transfer protocol.

arXiv comment4 pages, 5 figures. To appear in Physical Review B, Brief Communication

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Cited by in corpus (5)

• Negative Thermal Expansion Coefficient of Graphene Measured by Raman Spectroscopy
• Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
• Straining Graphene by Chemical Vapour Deposition Growth on Copper
• The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)
• Stress effects on the Raman spectrum of an amorphous material: theory and experiment on a-Si:H