First principles study of electronic transport through a Cu(111)|graphene junction

Abstract

We report first principles investigations of the nonequilibrium transport properties of a Cu(111)|graphene interface. The Cu(111) electrode is found to induce a transmission minimum (TM) located -0.68eV below the Fermi level, a feature originating from the Cu-induced charge transfer resulting in n-type doped graphene with the Dirac point coinciding with the TM. An applied bias voltage shifts the n-graphene TM relative to the pure graphene TM and leads to a distinctive peak in the differential conductance indicating the doping level, a characteristic not observed in pure graphene.

3 pages, 3 figures

References in corpus (5)

• The electronic properties of graphene
• Doping graphene with metal contacts
• Graphene photodetectors for high-speed optical communications
• Effects of metallic contacts on electron transport through graphene
• Transport through normal metal - graphene contacts

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