Epitaxial Graphene Electronic Structure And Transport

Abstract

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure, and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analog epitaxial graphene amplifiers.

18 pages, 10 figures to be published in J. Phys. D, special Issue on Carbon Related Materials Cluster

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• Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
• Weak localisation magnetoresistance and valley symmetry in graphene
• Strong suppression of weak (anti)localization in graphene
• Epitaxial graphene
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• Landau level spectroscopy of ultrathin graphite layers
• Epitaxial graphene transistors on SiC substrates
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• Weak antilocalization in epitaxial graphene: evidence for chiral electrons
• Highly-ordered graphene for two dimensional electronics
• The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics
• Electron states of mono- and bilayer graphene on SiC probed by STM
• Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy
• Symmetry Breaking in Few Layer Graphene Films
• The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
• Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission
• High-Energy Limit of Massless Dirac Fermions in Multilayer Graphene using Magneto-Optical Transmission Spectroscopy
• Density-Functional Theory of Graphene Sheets
• Graphene: A Pseudochiral Fermi Liquid
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Cited by in corpus (33)

• Electronic transport in two dimensional graphene
• Lattice relaxation and energy band modulation in twisted bilayer graphenes
• Unravelling the intrinsic and robust nature of van Hove singularities in twisted bilayer graphene
• Spintronics with graphene
• Interlayer coupling in rotationally faulted multilayer graphenes
• Dodecagonal bilayer graphene quasicrystal and its approximants
• Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene
• Carrier scattering from dynamical magneto-conductivity in quasi-neutral epitaxial graphene
• Organometallic Complexes of Graphene and Carbon Nanotubes: Introducing New Perspectives in Atomtronics, Spintronics, High Mobility Graphene Electronics and Energy Conversion Catalysis
• Gate tunable topological flat bands in twisted monolayer-bilayer graphene
• Structured epitaxial graphene: growth and properties
• Local transport measurements at mesoscopic length scales using scanning tunneling potentiometry
• Electron spectrum of epitaxial graphene monolayers
• Topological flat bands in rhombohedral tetralayer and multilayer graphene on hexagonal boron nitride moire superlattices
• Growth of thin graphene layers on stacked SiC surface in ultra high vacuum
• A method to extract pure Raman spectrum of epitaxial graphene on SiC
• The quantum Hall effect in graphene - a theoretical perspective
• Topological flat bands without magic angles in massive twisted bilayer graphenes
• Electronic structure of 30° twisted double bilayer graphene
• Spin-helical Dirac states in graphene induced by polar-substrate surfaces with giant spin-orbit interaction: a new platform for spintronics
• Symmetry-breaking supercollisions in Landau-quantized graphene
• Landau Levels and Band Bending in Few-Layer Epitaxial Graphene
• Theoretical Aspects of the Fractional Quantum Hall Effect in Graphene
• CVD Formation of Graphene on SiC Surface in Argon Atmosphere
• Carrier-induced modulation of radiation by a gated graphene
• Effective-mass theory of collapsed carbon nanotubes
• Impact of local stacking on the graphene-impurity interaction: theory and experiments
• Shaping graphene superconductivity with nanometer precision
• Specific features of electric charge screening in few-layer graphene films
• Magnetic field controlled vacuum charge in graphene quantum dots with a mass gap
• Optimization of epitaxial graphene growth for quantum metrology
• Weak localization competes with the quantum oscillations in a natural electronic superlattice: the case of Na${}_{1.5}$(PO${}_2$)${}_4$(WO${}_3$)${}_{20}$
• Electric charge and potential distribution in twisted multilayer graphene