The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction

Abstract

We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab-initio calculations. The measurements also indicate that multi-layer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].

9 pages with 6 figures

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Cited by in corpus (21)

• The electronic properties of graphene
• Approaching the Dirac point in high mobility multi-layer epitaxial graphene
• Lattice relaxation and energy band modulation in twisted bilayer graphenes
• Raman spectroscopy of epitaxial graphene on a SiC substrate
• Ab initio Study of Graphene on SiC
• Fermi velocity engineering in graphene by substrate modification
• The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics
• Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
• Phonon dispersions and vibrational properties of monolayer, bilayer, and trilayer graphene
• Few layers graphene on 6H-SiC(000-1): an STM study
• The interface structure of epitaxial graphene grown on 4H-SiC(0001)
• Optical absorption of twisted bilayer graphene with interlayer potential asymmetry
• Selective epitaxial growth of graphene on SiC
• Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC
• Relative Stability of Bernal and Rhombohedral Stackings in Trilayer Graphene under Distortions
• Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3$\times$3)-3C-SiC($\bar{\text{1}}\bar{\text{1}}\bar{\text{1}}$) reconstruction
• Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)
• Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC
• Photon absorption in twisted bilayer graphene
• Magneto-electronic properties of twisted bilayer graphene system
• Raman spectroscopy and imaging of graphene