Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)

Abstract

We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show that, in contrast with Si-face epitaxial films, the first graphene layer that forms on the C-face of SiC is purely metallic with its $\pi$-bands partially preserved. Typical free-standing characteristics are fully recovered with a second graphene layer. We moreover discuss on the magnetic properties of the interface and the absence of Fermi-level pinning effects that could allow for a plausible device operation starting from the off-state.

4 pages, 4 figures

References in corpus (3)

• Ab initio Study of Graphene on SiC
• The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
• Electronic structure of epitaxial graphene nanoribbons on SiC(0001)