Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)

Abstract

We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show that, in contrast with Si-face epitaxial films, the first graphene layer that forms on the C-face of SiC is purely metallic with its $\pi$-bands partially preserved. Typical free-standing characteristics are fully recovered with a second graphene layer. We moreover discuss on the magnetic properties of the interface and the absence of Fermi-level pinning effects that could allow for a plausible device operation starting from the off-state.

arXiv comment4 pages, 4 figures

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Cited by in corpus (1)

• Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)