59 citations · 453 across the 25 of their papers we have counts for
25 papers
Molecular Dynamics Study of Defect Evolution Mechanisms in 3C-SiC for Quantum Technologies
Irslan Ullah Ashraf, Gaetano Calogero, Ioannis Deretzis +4
The migration of point defects and formation of spin defects in 3C-SiC were investigated using molecular dynamics simulations, with migration barriers obtained from Nudged Elastic…
First-Principles Investigation of Surface-Induced Effects on the Properties of Divacancy Qubits in 3C-SiC
Rosario G. Viglione, Giovanni Castorina, Gaetano Calogero +4
Neutral silicon-carbon divacancy (VV) in cubic silicon carbide (3C-SiC) is a promising class of point defects for quantum technologies based on active crystalline cent…
Tailoring nuclear spins order with defects: a Quantum Technology CAD study
Gaetano Calogero, Ioannis Deretzis, Giuseppe Fisicaro +3
The full design of relevant systems for quantum applications, ranging from quantum simulation to sensing, is presented using a combination of atomistic methods. A prototypical syst…
Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
Damiano Ricciarelli, Jonas Müller, Guilhem Larrieu +11
Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semicon…
Local Coordination Modulates the Reflectivity of Liquefied Si-Ge Alloys
Damiano Ricciarelli, Ioannis Deretzis, Gaetano Calogero +3
The properties of liquid Si-Ge binary systems at melting conditions deviate from those expected by the ideal alloy approximation. Particularly, a non-linear dependence of the diele…
Atomistic insights into ultrafast SiGe nanoprocessing
Gaetano Calogero, Domenica Raciti, Damiano Ricciarelli +9
Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized pha…