Electron backscattering from stacking faults in SiC by means of \textit{ab initio} quantum transport calculations

Abstract

We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and conduction bands that can be distinguished for their enhanced density of states at particular wave number subspaces. The consequent localized perturbation potential significantly scatters the propagating electron waves and strongly increases the resistance for $n$-doped systems. We argue that resonant scattering from SFs should be one of the principal degrading mechanisms for device operation in silicon carbide.

5 pages, 4 figures

References in corpus (5)

• The SIESTA method for ab initio order-N materials simulation
• Efficient index handling of multidimensional periodic boundary conditions
• Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies
• Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)
• Charged basal stacking fault (BSF) scattering in nitride semiconductors

Cited by in corpus (2)

• Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
• Effect of edge dislocations on structural and electric properties of 4H-SiC