Atomistic insights into ultrafast SiGe nanoprocessing

Abstract

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale super-lattice Kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations, as well as advanced applications to strained, defected, nanostructured and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

References in corpus (7)

• The 2021 Quantum Materials Roadmap
• SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
• Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
• Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
• STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si${}_{1-x}$ B${}_x$
• Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
• Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Cited by in corpus (2)

• Local Coordination Modulates the Reflectivity of Liquefied Si-Ge Alloys
• Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation