101 citations · 150 across the 7 of their papers we have counts for
8 papers
Supercontinuum generation in 2D graphene oxide film coated SiN waveguides
David J. Moss
Enhanced supercontinuum generation (SCG) is experimentally demonstrated in integrated silicon nitride (Si3N4) waveguides incorporating highly nonlinear graphene oxide (GO) in the f…
Atomistic insights into ultrafast SiGe nanoprocessing
Gaetano Calogero, Domenica Raciti, Damiano Ricciarelli +9
Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized pha…
Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys
Damiano Ricciarelli, Giovanni Mannino, Ioannis Deretzis +10
Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increas…
Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
Toshiyuki Tabata, Fabien Rozé, Louis Thuries +8
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typicall…
Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing
Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable t…
Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing
Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable therm…
Laser Processing For 3D Junctionless Transistor Fabrication
D. Bosch, P. Acosta Alba, S. Kerdiles +13
To take fully advantage of Junctionless transistor (JLT) low-cost and low-temperature features we investigate a 475 degC process to create onto a wafer a thin poly-Si layer on insu…
Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics
Jean-Marie Poumirol, Clément Majorel, Nicolas Chery +11
We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a…