Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

Abstract

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a SOI layer partially amorphized by arsenic ion implantation and to activate the dopants. In a microsecond scale (~10^-6 s to ~10^-5 s) UV-LA process, monocrystalline solid phase recrystallization and dopant activation without junction deepening is evidenced, thus opening various applications in low thermal budget integration flows.

Accepted Paper for 20th International Workshop on Junction Technology (IWJT2021)