18 citations · 45 across the 7 of their papers we have counts for
7 papers
Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices
Toshiyuki Tabata, Fabien Rozé, Louis Thuries +4
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, whi…
Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
Toshiyuki Tabata, Fabien Rozé, Louis Thuries +8
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typicall…
Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing
Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable t…
Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films
Remi Demoulin, Richard Daubriac, Louis Thuries +5
The need of surface-localized thermal processing is strongly increasing especially w.r.t three-dimensionally (3D) integrated electrical devices. UV laser annealing (UV-LA) technolo…
Copper Large-scale Grain Growth by UV Nanosecond Pulsed Laser Annealing
Toshiyuki Tabata, Pierre-Edouard Raynal, Fabien Rozé +5
UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized heating and short timescale high temperature processing, which can be advantageous to reduce metal line…
Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing
Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable therm…
Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing
Toshiyuki Tabata, Karim, Huet +5
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity i…