most citedRecent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices

18 citations · 39 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2022★ 18 cited

Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices

Toshiyuki Tabata, Fabien Rozé, Louis Thuries +4

The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, whi…

physics.app-ph2022★ 8 cited

Microsecond non-melt UV laser annealing for future 3D-stacked CMOS

Toshiyuki Tabata, Fabien Rozé, Louis Thuries +8

Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typicall…

physics.app-ph2022★ 3 cited

Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing

Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable t…

physics.app-ph2021★ 10 cited

Copper Large-scale Grain Growth by UV Nanosecond Pulsed Laser Annealing

Toshiyuki Tabata, Pierre-Edouard Raynal, Fabien Rozé +5

UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized heating and short timescale high temperature processing, which can be advantageous to reduce metal line…

physics.app-ph2021

Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable therm…