18 citations · 37 across the 5 of their papers we have counts for
5 papers
Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices
Toshiyuki Tabata, Fabien Rozé, Louis Thuries +4
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, whi…
Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing
Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable t…
Copper Large-scale Grain Growth by UV Nanosecond Pulsed Laser Annealing
Toshiyuki Tabata, Pierre-Edouard Raynal, Fabien Rozé +5
UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized heating and short timescale high temperature processing, which can be advantageous to reduce metal line…
Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing
Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable therm…
Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing
Toshiyuki Tabata, Karim, Huet +5
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity i…