18 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Association for the Study of the Middle East and AfricaUS2 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR2 papers
- Laboratoire d'Électronique des Technologies de l'InformationFR2 papers
- Li Creative Technologies (United States)US2 papers
- Université Grenoble AlpesFR2 papers
- Axcelis Technologies (United States)US1 paper
- CEA GrenobleFR1 paper
- Centre National de la Recherche ScientifiqueFR1 paper
- Laboratoire d'Analyse et d'Architecture des SystèmesFR1 paper
- Laboratoire de Photonique Quantique et MoléculaireFR1 paper
8 papers
Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices
Toshiyuki Tabata, Fabien Rozé, Louis Thuries +4
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, whi…
Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
Toshiyuki Tabata, Fabien Rozé, Louis Thuries +8
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typicall…
Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing
Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable t…
Copper Large-scale Grain Growth by UV Nanosecond Pulsed Laser Annealing
Toshiyuki Tabata, Pierre-Edouard Raynal, Fabien Rozé +5
UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized heating and short timescale high temperature processing, which can be advantageous to reduce metal line…
Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing
Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba +5
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable therm…
Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing
Toshiyuki Tabata, Karim, Huet +5
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity i…
Quantum Monte Carlo facing the Hartree-Fock symmetry dilemma: The case of hydrogen rings
Peter Reinhardt, Julien Toulouse, Roland Assaraf +2
When using Hartree-Fock (HF) trial wave functions in quantum Monte Carlo calculations, one faces, in case of HF instabilities, the HF symmetry dilemma in choosing between the symme…
Quantum Monte Carlo calculations of electronic excitation energies: the case of the singlet (CO) transition in acrolein
Julien Toulouse, Michel Caffarel, Peter Reinhardt +2
We report state-of-the-art quantum Monte Carlo calculations of the singlet (CO) vertical excitation energy in the acrolein molecule, extending the recent study of Bouab…