18 citations · 36 across the 4 of their papers we have counts for
5 papers
Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes
Richard Monflier, Richard Daubriac, Mahmoud Haned +9
For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and hi…
Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices
Toshiyuki Tabata, Fabien Rozé, Louis Thuries +4
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, whi…
Microsecond non-melt UV laser annealing for future 3D-stacked CMOS
Toshiyuki Tabata, Fabien Rozé, Louis Thuries +8
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typicall…
Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films
Remi Demoulin, Richard Daubriac, Louis Thuries +5
The need of surface-localized thermal processing is strongly increasing especially w.r.t three-dimensionally (3D) integrated electrical devices. UV laser annealing (UV-LA) technolo…
Copper Large-scale Grain Growth by UV Nanosecond Pulsed Laser Annealing
Toshiyuki Tabata, Pierre-Edouard Raynal, Fabien Rozé +5
UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized heating and short timescale high temperature processing, which can be advantageous to reduce metal line…