Phonon Driven Nonlinear Electrical Behavior in Molecular Devices
arXiv:0710.1736 · doi:10.1103/PhysRevLett.99.136404
Abstract
Electronic transport in a model molecular device coupled to local phonon modes is theoretically analyzed. The method allows for obtaining an accurate approximation of the system's quantum state irrespective of the electron and phonon energy scales. Nonlinear electrical features emerge from the calculated current-voltage characteristics. The quantum corrections with respect to the adiabatic limit characterize the transport scenario, and the polaronic reduction of the effective device-lead coupling plays a fundamental role in the unusual electrical features.
14 pages, 4 figures
References in corpus (5)
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- Phonon runaway in nanotube quantum dots
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Cited by in corpus (12)
- Nonequilibrium isolated molecule limit
- Non-equilibrium transport through molecular junctions in the quantum regime
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- Identification of the Atomic Scale Structures of the Gold-Thiol Interfaces of Molecular Nanowires by Inelastic Tunneling Spectroscopy
- Insulator-metal transition in biased finite polyyne systems
- Transport through a vibrating quantum dot: Polaronic effects
- Negative differential conductance in molecular junctions: an overview of experiment and theory
- Phonon-affected steady-state transport through molecular quantum dots
- Inelastic Tunneling Spectroscopy of Gold-Thiol and Gold-Thiolate Interfaces in Molecular Junctions: The Role of Hydrogen
- Bistable states of quantum dot array junctions for high-density memory
- Bistability in the Tunnelling Current through a Ring of Coupled Quantum Dots
- Local Classical and Quantum Criticality due to Electron-Vibration Interaction