Electronic structure of epitaxial graphene nanoribbons on SiC(0001)

Abstract

We present electronic structure calculations of few-layer epitaxial graphene nanoribbons on SiC(0001). Trough an atomistic description of the graphene layers and the substrate within the extended Hückel Theory and real/momentum space projections we argue that the role of the heterostructure's interface becomes crucial for the conducting capacity of the studied systems. The key issue arising from this interaction is a Fermi level pinning effect introduced by dangling interface bonds. Such phenomenon is independent from the width of the considered nanostructures, compromising the importance of confinement in these systems.

arXiv comment8 pages, 4 figures

References in corpus (5)

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Cited by in corpus (5)

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• Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)
• Electronic properties of edge-functionalized zigzag graphene nanoribbons on SiO2 substrate