Stability and decoherence analysis of the silicon vacancy in 3C-SiC

Abstract

We study the silicon vacancy in 3C SiC as a color center of interest in the field of Quantum Technologies, focusing on its magnetic interaction with the SiC nuclear spin bath containing Si29 and C13 nuclei in their natural isotopic concentration. We calculate the system energetic and magnetic properties with ab initio methods based on the Density Functional Theory, identifying the neutral charge state of the silicon vacancy as the most favorable for p doped 3C SiC systems. We thereon evaluate the Free Induction Decay and the Hahn echo sequence on the electron spin interacting with the nuclear spin bath. Here, the Electron Spin Echo Envelope Modulation phenomenon, due to single nuclear spin flipping processes, and the overall decay are highlighted in the context of the Cluster Correlation Expansion theory. We find a non exponential coherence decay, which is a typical feature of solid state qubits subjected to low frequency 1/f noise from the environment.

36 pages, 10 figures, 3 tables

References in corpus (6)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Theory of electron spin decoherence by interacting nuclear spins in a quantum dot
• Quantum many-body theory of qubit decoherence in a finite-size spin bath
• Decoherence in qubits due to low-frequency noise
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Characterization of a quasi-static environment with a qubit

Cited by in corpus (2)

• Tailoring nuclear spins order with defects: a Quantum Technology CAD study
• Elastic properties of cubic silicon carbide with Si vacancies