Identification of Si-vacancy related room temperature qubits in 4H silicon carbide

Abstract

Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, still two competing models, the isolated negatively charged silicon vacancy and the complex of negatively charged silicon vacancy and neutral carbon vacancy [Phys. Rev. Lett.\ \textbf{115}, 247602 (2015)] are argued as an origin. By means of high precision first principles calculations and high resolution electron spin resonance measurements, we here unambiguously identify the Si-vacancy related qubits in hexagonal SiC as isolated negatively charged silicon vacancies. Moreover, we identify the Si-vacancy qubit configurations that provide room temperature optical readout.

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References in corpus (13)

• Quantum computing with defects
• High-fidelity projective readout of a solid-state spin quantum register
• Coherent control of single spins in silicon carbide at room temperature
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Polytype control of spin qubits in silicon carbide
• Electrically and mechanically tunable electron spins in silicon carbide color centers
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
• Optical thermometry based on level anticrossing in silicon carbide
• Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces
• Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions
• Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure
• Vector magnetometry based on S=3/2 electronic spins

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