482 citations · 1.8k across the 21 of their papers we have counts for
21 papers
Minute-long quantum coherence enabled by electrical depletion of magnetic noise
Cyrus Zeledon, Benjamin Pingault, Jonathan C. Marcks +13
Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor tech…
The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics
Di Liu, Florian Kaiser, Vladislav Bushmakin +7
The negatively-charged silicon vacancy center () in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication,…
Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions
T. Astner, P. Koller, C. M. Gilardoni +6
Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, sever…
Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC
Olger V. Zwier, Tom Bosma, Carmem M. Gilardoni +5
Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In…
Broadband single-mode planar waveguides in monolithic 4H-SiC
Tom Bosma, Joop Hendriks, Misagh Ghezellou +3
Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and com…
Five-second coherence of a single spin with single-shot readout in silicon carbide
Christopher P. Anderson, Elena O. Glen, Cyrus Zeledon +11
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot re…
Photoluminescence lineshapes and charge state control of divacancy qubits in silicon carbide
A. Csóré, I. G. Ivanov, N. T. Son +1
Divacancy in its neutral charge state (VV) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC…
Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
A. Csóré, N. T. Son, A. Gali
The negatively charged silicon vacancy [V] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V defect possesses…
Dipolar spin relaxation of divacancy qubits in silicon carbide
Oscar Bulancea Lindvall, Nguyen Tien Son, Igor A. Abrikosov +1
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numero…
Entanglement and control of single quantum memories in isotopically engineered silicon carbide
Alexandre Bourassa, Christopher P. Anderson, Kevin C. Miao +9
Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in sil…
Spectrally reconfigurable quantum emitters enabled by optimized fast modulation
Daniil M. Lukin, Alexander D. White, Rahul Trivedi +16
The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information proces…
Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
Péter Udvarhelyi, Gergő Thiering, Naoya Morioka +9
Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore…
Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
Matthias Widmann, Matthias Niethammer, Dmitry Yu. Fedyanin +14
Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of th…
Electrical and optical control of single spins integrated in scalable semiconductor devices
Christopher P. Anderson, Alexandre Bourassa, Kevin C. Miao +8
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leve…
Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
Matthias Niethammer, Matthias Widmann, Torsten Rendler +11
Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an…
Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
L. Spindlberger, A. Csóré, G. Thiering +7
We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1…
Excitation properties of the divacancy in 4H-SiC
Björn Magnusson, Nguyen Tien Son, András Csóré +4
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs…
Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
Charles F. de las Casas, David J. Christle, Jawad Ul Hassan +3
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scal…
Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
Viktor Ivády, Joel Davidsson, Nguyen Tien Son +3
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous c…
Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
William F. Koehl, Berk Diler, Samuel J. Whiteley +4
Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing…
Isolated electron spins in silicon carbide with millisecond-coherence times
David J. Christle, Abram L. Falk, Paolo Andrich +6
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of…