112 citations · 204 across the 5 of their papers we have counts for
15 papers
Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC
Olger V. Zwier, Tom Bosma, Carmem M. Gilardoni +5
Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In…
Broadband single-mode planar waveguides in monolithic 4H-SiC
Tom Bosma, Joop Hendriks, Misagh Ghezellou +3
Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and com…
Five-second coherence of a single spin with single-shot readout in silicon carbide
Christopher P. Anderson, Elena O. Glen, Cyrus Zeledon +11
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot re…
Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
A. Csóré, N. T. Son, A. Gali
The negatively charged silicon vacancy [V] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V defect possesses…
Dipolar spin relaxation of divacancy qubits in silicon carbide
Oscar Bulancea Lindvall, Nguyen Tien Son, Igor A. Abrikosov +1
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numero…
Entanglement and control of single quantum memories in isotopically engineered silicon carbide
Alexandre Bourassa, Christopher P. Anderson, Kevin C. Miao +9
Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in sil…