activity
20172022
most citedIdentification of Si-vacancy related room temperature qubits in 4H silicon carbide

112 citations · 204 across the 5 of their papers we have counts for

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8 papers · 1 filter

quant-ph20222 cited

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Olger V. Zwier, Tom Bosma, Carmem M. Gilardoni +5

Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In…

quant-ph2021

Five-second coherence of a single spin with single-shot readout in silicon carbide

Christopher P. Anderson, Elena O. Glen, Cyrus Zeledon +11

An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot re…

quant-ph2020

Entanglement and control of single quantum memories in isotopically engineered silicon carbide

Alexandre Bourassa, Christopher P. Anderson, Kevin C. Miao +9

Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. In this work, we demonstrate control of isolated 29Si nuclear spins in sil…

quant-ph2020

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Daniil M. Lukin, Alexander D. White, Rahul Trivedi +16

The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information proces…

quant-ph2020

Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide

Péter Udvarhelyi, Gergő Thiering, Naoya Morioka +9

Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore…

quant-ph2019

Electrical and optical control of single spins integrated in scalable semiconductor devices

Christopher P. Anderson, Alexandre Bourassa, Kevin C. Miao +8

Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leve…