112 citations · 210 across the 6 of their papers we have counts for
Showing cond-mat.mtrl-sciShow all
3 papers · 1 filter
cond-mat.mtrl-sci2021
Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
A. Csóré, N. T. Son, A. Gali
The negatively charged silicon vacancy [V] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V defect possesses…
cond-mat.mtrl-sci2018
Excitation properties of the divacancy in 4H-SiC
Björn Magnusson, Nguyen Tien Son, András Csóré +4
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs…
cond-mat.mtrl-sci2017★ 112 cited
Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
Viktor Ivády, Joel Davidsson, Nguyen Tien Son +3
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous c…