Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide

Abstract

Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects, and hinders their coupling to optical cavities. Here we show that electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales, which we use to stabilize unstable or non-neutral divacancies into their neutral charge state. Using fluorescence-based charge state detection, we show both 975 nm and 1130 nm excitation can prepare its neutral charge state with near unity efficiency.

arXiv comment12 pages, 4 figures

References in corpus (20)

• Experimental loophole-free violation of a Bell inequality using entangled electron spins separated by 1.3 km
• Nanometer scale quantum thermometry in a living cell
• Sensing electric fields using single diamond spins
• Heralded entanglement between solid-state qubits separated by 3 meters
• Photo induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single shot charge state detection
• Properties of nitrogen-vacancy centers in diamond: group theoretic approach
• Coupling of Nitrogen-Vacancy Centers to Photonic Crystal Cavities in Monocrystalline Diamond
• Entanglement Distillation between Solid-State Quantum Network Nodes
• The negatively charged nitrogen-vacancy centre in diamond: the electronic solution
• Electrically and mechanically tunable electron spins in silicon carbide color centers
• Coherent control of the silicon-vacancy spin in diamond
• Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
• Optical charge state control of spin defects in 4H-SiC
• Dynamic stabilization of the optical resonances of single nitrogen-vacancy centers in diamond
• Violation of a temporal Bell inequality for single spins in solid by over 50 standard deviations
• Electrical Tuning of Single Nitrogen-Vacancy Center Optical Transitions Enhanced by Photoinduced Fields
• Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers
• Electrically driven spin resonance in silicon carbide color centers
• Protecting a diamond quantum memory by charge state control
• Optical switching of defect charge states in 4H-SiC

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